1 105 a new add-a-pak tm power modules thyristor/ diode and thyristor/ thyristor irk.105 series bulletin i27133 rev. d 09/97 www.irf.com parameters irk.105 units i t(av) or i f(av) @ 85c i o(rms) (*) 235 a i tsm @ 50hz 1785 a i fsm @ 60hz 1870 a i 2 t @ 50hz 15.91 ka 2 s @ 60hz 14.52 ka 2 s i 2 ? t 159.1 ka 2 ? s v rrm range 400 to 1600 v t stg - 40 to 150 o c t j - 40 to130 o c (*) as ac switch. these irk series of new add-a-paks use power diodes and thyristors in a variety of circuit configu- rations. the semiconductor chips are electrically isolated from the base plate, allowing common heatsinks and compact assemblies to be built. they can be interconnected to form single phase or three phase bridges or ac controllers. these modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, and temperature and motor speed control circuits. 105 a major ratings and characteristics features electrically isolated: dbc base plate 3500 v rms isolating voltage standard jedec package simplified mechanical designs, rapid assembly auxiliary cathode terminals for wiring convenience high surge capability wide choice of circuit configurations large creepage distances ul e78996 approved description
irk.105 series 2 bulletin i27133 rev. d 09/97 www.irf.com i t(av) max. average on-state current (thyristors) 180 o conduction, half sine wave, i f(av) max. average forward t c = 85 o c current (diodes) i o(rms ) max. continuous rms on-state current. as ac switch i tsm max. peak, one cycle 1785 t=10ms no voltage or non-repetitive on-state 1870 t=8.3ms reapplied i fsm or forward current 1500 t=10ms 100% v rrm 1570 t=8.3ms reapplied 2000 t=10ms t j = 25 o c, 2100 t=8.3ms no voltage reapplied i 2 t max. i 2 t for fusing 15.91 t=10ms no voltage 14.52 t=8.3ms reapplied 11.25 t=10ms 100% v rrm 10.27 t=8.3ms reapplied 20.00 t=10ms t j = 25 o c, 18.30 t=8.3ms no voltage reapplied i 2 ? t max. i 2 ? t for fusing (1) 159.1 k a 2 ? s t= 0.1 to 10ms, no voltage reappl. t j =t j max v t(to) max. value of threshold 0.80 low level (3) voltage (2) 0.85 high level (4) r t max. value of on-state 2.37 low level (3) slope resistance (2) 2.25 high level (4) v tm max. peak on-state or i tm = p x i t(av) v fm forward voltage i fm = p x i f(av) di/dt max. non-repetitive rate t j = 25 o c, from 0.67 v drm , of rise of turned on 150 a/s i tm = p x i t(av) , i g = 500ma, current t r < 0.5 s, t p > 6 s i h max. holding current 200 t j = 25 o c, anode supply = 6v, ma resistive load, gate open circuit i l max. latching current 400 t j = 25 o c, anode supply = 6v, resistive load parameters irk.105 units conditions 235 on-state conduction initial t j = t j max. a ka 2 s v m w 1.64 v or i (rms) i (rms) electrical specifications voltage ratings type number v rrm , maximum v rsm , maximum v drm , max. repetitive i rrm voltage repetitive non-repetitive peak off-state voltage, i drm code peak reverse voltage peak reverse voltage gate open circuit 130c -vvvma 04 400 500 400 06 600 700 600 08 800 900 800 irk.105 10 1000 1100 1000 20 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 sinusoidal half wave, initial t j = t j max. 105 t j = t j max t j = t j max t j = 25c (1) i 2 t for time t x = i 2 ? t x ? t x (2) average power = v t(to) x i t(av) + r t x (i t(rms) ) 2 (3) 16.7% x p x i av < i < p x i av (4) i > p x i av
irk.105 series 3 bulletin i27133 rev. d 09/97 www.irf.com t j junction operating temperature range t stg storage temp. range - 40 to 150 r thjc max. internal thermal resistance, junction 0.135 per module, dc operation to case r thcs typical thermal resistance case to heatsink t mounting torque 10% to heatsink busbar 3 wt approximate weight 83 (3) g (oz) case style to-240aa jedec thermal and mechanical specifications parameters irk.105 units conditions - 40 to 130 0.1 5 (5) available with dv/dt = 1000v/ m s, to complete code add s90 i.e. irkt105/16 s90. c k/w nm mounting surface flat, smooth and greased. flatness < 0.03 mm; roughness < 0.02 mm i rrm max. peak reverse and i drm off-state leakage current 20 ma t j = 130 o c, gate open circuit at v rrm , v drm v ins rms isolation voltage 2500 (1 min) 50 hz, circuit to base, all terminals 3500 (1 sec) shorted dv/dt max. critical rate of rise t j = 130 o c, linear to 0.67 v drm , of off-state voltage (5) gate open circuit 500 v/ m s triggering blocking v p gm max. peak gate power 12 p g(av) max. average gate power 3 i gm max. peak gate current 3 a -v gm max. peak negative gate voltage v gt max. gate voltage 4.0 t j = - 40c required to trigger 2.5 t j = 25c 1.7 t j = 125c i gt max. gate current 270 t j = - 40c required to trigger 150 ma t j = 25c 80 t j = 125c v gd max. gate voltage that will not trigger i gd max. gate current that will not trigger 0.25 v 6ma anode supply = 6v resistive load anode supply = 6v resistive load w v 10 t j = 125 o c, rated v drm applied t j = 125 o c, rated v drm applied parameters irk. 105 units conditions a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound parameters irk.105 units conditions
irk.105 series 4 bulletin i27133 rev. d 09/97 www.irf.com outlines table irkt105/.. (*) irkl105/.. (*) irkh105/.. (*) (*) for terminals connections, see circuit configurations table all dimensions in millimeters (inches) 30 0.5 (1.18 0.02 ) 29 0.5 (1 .1 3 0.02) 6.1 0 .3 ( 0.24 0.01) 24 0.5 18 r ef. (0.71) 15.5 0.5 (0.61 0.02) 30 0.1 (1.18 0.04) fa ston tab. 2.8 x 0.8 20 .5 0 .75 (0.81 0 .03) 15 0.5 (0.59 0.02 ) 20 0.5 (0.79 0.02) (0.16 0.01 ) 4 pitch 4.0 0.2 (0.25 0.01) 6.3 0 .3 5 2 3 80 0.3 (3 .15 0.01) (3 .6 2 0.02) 92 0 .5 20 0.5 scre ws m5 x 0 .8 ( 0.11 x 0. 03 ) (0.94 0.02 ) (0.79 0.02 ) 1 30 0.5 (1 .1 8 0 .02 ) 29 0.5 (1 .1 3 0.02) 6.1 0.3 (0.24 0.01) 24 0.5 18 ref. (0.71) 15.5 0.5 (0.61 0.02) 30 0. 1 (1.18 0.04) faston tab. 2.8 x 0.8 20 .5 0.75 ( 0.8 1 0.03 ) 15 0.5 (0.59 0.02) 20 0.5 (0.79 0.02) 5.8 0.25 ( 0.16 0.01) 4 pitch 4.0 0.2 (0.23 0.01) (0.25 0.01) 6.3 0.3 576 2 3 80 0.3 (3.15 0.01) (3.62 0.02) 92 0.5 20 0.5 screws m5 x 0.8 (0.11 x 0.03) (0.94 0.02) (0.79 0.02) 1 30 0.5 (1.18 0 .02) 29 0.5 (1 .1 3 0.02 ) 6.1 0.3 (0.24 0.01) 24 0 .5 18 ref. (0.71) 15.5 0.5 (0.61 0.02) 30 0.1 (1.1 8 0.04 ) faston tab. 2.8 x 0.8 20.5 0.75 (0 .81 0.03) 15 0.5 (0.59 0.02) 20 0.5 (0.79 0.02) (0.16 0.01) pitch 4.0 0 .2 (0.25 0.01) 6.3 0.3 76 2 3 80 0.3 (3.15 0.01) (3.62 0.02) 92 0.5 20 0.5 screws m5 x 0.8 (0.11 x 0.03) ( 0.94 0.02) (0.79 0.02) 1 note: to order the optional hardware see bulletin i27900 sine half wave conduction rect. wave conduction devices units 180 o 120 o 90 o 60 o 30 o 180 o 120 o 90 o 60 o 30 o irk.105 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 c/w d r conduction (per junction) (the following table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc)
irk.105 series 5 bulletin i27133 rev. d 09/97 www.irf.com irk t 105 / 16 s90 device code 1 2 34 5 1 - module type 2 - circuit configuration (see circuit configuration table) 3 - current code * * 4 - voltage code (see voltage ratings table) 5 - dv/dt code: s90 = dv/dt 1000 v/s no letter = dv/dt 500 vs irk.106 types with no auxiliary cathode * * available with no auxiliary cathode. to specify change: 105 to 106 e.g. : irkt106/16 etc. ordering information table circuit configurations table irkt irkh irkl 6 4 13.8 (0.53) + k2 g2 - k1 g1 ~ (1) (2) (3) (4) (5) (7) (6) + - k1 g1 ~ (1) (2) (3) (4) (5) + - ~ (1) (2) (3) k2 (7) g2 (6) fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics 70 80 90 100 110 120 130 0 20 40 60 80 100 12 0 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c ) conduction angle irk.105.. series r (dc) = 0.27 k/w thjc 70 80 90 100 110 120 130 0 2040608010012014016018 0 dc 30 60 90 120 180 average on-state current (a) maximum allowable case t emperature ( c ) conduction period irk.105.. series r (dc) = 0.27 k/w thjc
irk.105 series 6 bulletin i27133 rev. d 09/97 www.irf.com fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state power loss characteristics 0 20 40 60 80 100 120 140 160 180 200 0 2040608010012014016018 0 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w ) average on-state current (a) irk.105.. series per junction t = 130c j 0 20 40 60 80 100 120 140 160 0 204060801001 20 rms limit maximum average on-state power loss (w ) average on-state current (a) 180 120 90 60 30 conduction angle irk.105.. series per junction t = 130c j 700 800 900 1000 1100 1200 1300 1400 1500 1600 110100 number of equal amplitude half cycle current pulses (n ) peak half sine wave on-state current (a) initia l t = 130 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with rated v applied following surge. rrm irk.105.. series per junction 600 800 1000 1200 1400 1600 1800 0.01 0.1 1 peak half sine wave on-state current (a) pulse train d urat ion (s) maximum non repetitive surge curr en t versus pulse train duration. contro l initial t = 130 c no voltage reapplied rated v reapplied of conduction may not be maintained . j rrm irk.105.. series per junction 0 20 40 60 80 100 120 140 maximum allowable ambient temperature ( c ) 2 k / w 1 k / w 0 . 7 k / w 0 . 5 k / w 0 . 3 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 . 2 k / w 0 50 100 150 200 250 300 350 0 40 80 120 160 200 240 180 120 90 60 30 total rms output current (a) maximum total on-state power loss (w) conduction angle irk.105.. series per module t = 130c j
irk.105 series 7 bulletin i27133 rev. d 09/97 www.irf.com fig. 9 - on-state power loss characteristics fig. 8 - on-state power loss characteristics fig. 10 - on-state voltage drop characteristics 0 20 40 60 80 100 120 140 maximum allowable ambient temperature ( c ) 0 . 5 k / w 0 . 3 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 . 2 k / w 0 . 7 k / w 1 k / w 2 k / w 0 100 200 300 400 500 600 0 40 80 120 160 200 total output current (a) maximum total power loss (w) 180 (sine) 180 (rec t) 2 x irk.105.. series sin gle ph ase bridg e connected t = 130 c j 0 20 40 60 80 100 120 140 maximum allowable ambient temperature ( c ) 1 k / w 0 . 5 k / w 0 . 3 k / w r = 0 . 1 k / w - d e l t a r 0 . 2 k / w thsa 0 100 200 300 400 500 600 700 800 900 0 40 80 120 160 200 240 280 to tal output current (a) maximum total power loss (w) 120 (rect) 3 x irk.105.. series three phase bridge connected t = 130c j 1 10 100 1000 00.511.522.533 .5 t = 25 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 130c j irk.105.. series per junction
irk.105 series 8 bulletin i27133 rev. d 09/97 www.irf.com fig. 14- gate characteristics fig. 13 - thermal impedance z thjc characteristics fig. 11 - recovery charge characteristics fig. 12 - recovery current characteristics 20 40 60 80 100 120 140 10 20 30 40 50 60 70 80 90 10 0 maximum reverse recovery current - irr (a ) rate of fall of forward curren t - di/dt (a/ s) 100 a 50 a i = 200 a tm 20 a 10 a irk.105.. series t = 125 c j 0.1 1 10 100 0.001 0.01 0.1 1 10 100 100 0 (b) (a) (4) (3) (2) (1) instantaneous gate current (a) instantaneous gate voltage (v) tj = -40 c tj = 25 c tj = 125 c a) recommended load line for b) recommended load line for vgd igd frequency limited by pg(av) (1) pgm = 200 w, tp = 300 s (2) pgm = 60 w, tp = 1 ms (3) pgm = 30 w, tp = 2 ms (4) pgm = 12 w, tp = 5 ms <= 30% rated di/dt: 15 v, 40 ohms tr = 1 s, tp >= 6 s rated di/dt: 20 v, 20 ohms tr = 0.5 s, tp >= 6 s rectangular gate pulse irk.105.. series 0.01 0.1 1 0.001 0.01 0.1 1 1 0 square wave pulse duration (s) thjc transient thermal impedance z (k/w) irk.105.. series per junct ion steady state value: r = 0.27 k/w (dc operation) thjc 100 200 300 400 500 600 700 10 20 30 40 50 60 70 80 90 10 0 100 a 50 a rate of fall of on-state current - di/dt (a/ s) maximum reverse recovery charge - qrr ( c ) i = 200 a tm 20 a 10 a irk.105.. series t = 125 c j
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